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FFSP1665A

Part No FFSP1665A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 16A TO220-2 / Diode Silicon Carbide Schottky 650 V 16A Through Hole TO-220-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 16A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 16 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 887pF @ 1V, 100kHz
Mounting Through Hole
Case / Package TO-220-2
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number FFSP1665
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number FFSP1665AOS,2156-FFSP1665A-488
Standard Package 800
Win Source Part Number 1325738-FFSP1665A
Ultra Librarian 3D Model Ultra Librarian FFSP1665A CAD Model

Description

The ON Semiconductor FFSP1665A represents a high-performance, silicon carbide (SiC) Schottky diode, designed to offer superior efficiency and reliability in a wide array of power applications. This cutting-edge component is part of ON Semiconductor's expansive portfolio of energy-efficient solutions, specifically tailored to enhance the performance of power conversion systems.

Key Features

  • High Blocking Voltage: With a 650V rating, the FFSP1665A is capable of supporting applications that require high voltage operation, providing a robust barrier against unexpected voltage spikes.
  • Low Forward Voltage Drop: The diode's low V<sub>F minimizes power loss during conduction, leading to increased system efficiency and reduced thermal management requirements.
  • Zero Reverse Recovery Charge: The absence of reverse recovery charge ensures reduced switching losses, which is particularly beneficial in high-frequency power switching applications.
  • Temperature Independent Switching Behavior: The performance of the FFSP1665A remains consistent across a wide temperature range, ensuring reliability in varied operating conditions.
  • High Surge Current Capability: This diode is designed to withstand high surge currents, making it well-suited for applications subject to transient overcurrent conditions.

Applications

The FFSP1665A is ideal for a variety of applications, including but not limited to:

  • Power Supply Units (PSUs)
  • Power Inverters
  • Electric Vehicle (EV) Charging Stations
  • Photovoltaic (PV) Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Power Converters

Product Advantages

By integrating the FFSP1665A into their designs, engineers can expect to see a marked improvement in the efficiency and longevity of their power systems. The diode's robust construction and advanced SiC technology make it an indispensable component for those seeking to push the boundaries of power density, efficiency, and thermal performance.

ON Semiconductor's commitment to quality and innovation is embodied in the FFSP1665A, making it a smart choice for designers looking to leverage the benefits of silicon carbide in their next-generation power conversion solutions.

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