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FFSP0865A

Part No FFSP0865A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 13A TO220-2 / Diode Silicon Carbide Schottky 650 V 13A Through Hole TO-220-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 13A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 463pF @ 1V, 100kHz
Mounting Through Hole
Case / Package TO-220-2
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number FFSP0865
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number FFSP0865AOS,2156-FFSP0865A-488
Standard Package 800
Win Source Part Number 1324284-FFSP0865A
Ultra Librarian 3D Model Ultra Librarian FFSP0865A CAD Model

Description

The ON Semiconductor FFSP0865A represents a high-performance 650V, 8A Silicon Carbide (SiC) Schottky Barrier Diode designed to deliver superior efficiency, reliability, and thermal performance in a wide range of applications. This diode is part of ON Semiconductor's extensive SiC portfolio, which is engineered to meet the demands of modern high-efficiency power electronics.

Key Features

  • Low Forward Voltage Drop: The FFSP0865A offers a low forward voltage drop, which translates to reduced power losses and higher efficiency in power conversion systems.
  • Zero Reverse Recovery Time: With zero reverse recovery time, this diode minimizes switching losses and is ideal for high-frequency applications.
  • High Surge Current Capability: It is capable of withstanding high surge currents, making it robust for applications with demanding transient conditions.
  • Temperature-Independent Switching Behavior: The performance of the FFSP0865A remains consistent across a wide temperature range due to the inherent characteristics of Silicon Carbide.
  • High Avalanche Energy Rated: This diode is designed to handle high energy pulses, ensuring reliability in harsh environments.

Applications

The FFSP0865A is suitable for a variety of applications, including but not limited to:

  • Power Supply Units (PSUs)
  • Electric Vehicle (EV) Charging Stations
  • Solar Inverters
  • Power Factor Correction (PFC) Circuits
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The FFSP0865A is manufactured in state-of-the-art facilities, ensuring that it meets the stringent requirements of industrial and automotive-grade applications.

Environmental Compliance

The FFSP0865A complies with RoHS and REACH environmental regulations, reflecting ON Semiconductor's dedication to environmental sustainability and the promotion of green energy solutions.

With its advanced Silicon Carbide technology, the FFSP0865A from ON Semiconductor is an excellent choice for designers looking to enhance system performance, reduce cooling requirements, and achieve higher power density in their next-generation power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7273 $51.8187
45+ $2.2378 $100.7010
70+ $2.1678 $151.7460
96+ $2.0979 $201.3984
124+ $2.0280 $251.4720
165+ $1.8182 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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