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FDD24AN06LA0

Part No FDD24AN06LA0
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET | MOSFET N-CH 60V 40A D-PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 7.1A, 40A
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 19mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1850pF at 25V
Power Dissipation (Maximum) 75W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1173753-FDD24AN06LA0
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD24AN06LA0 CAD Model

Description

ON Semiconductor FDD24AN06LA0 N-Channel PowerTrench® MOSFET

The FDD24AN06LA0 is a high-performance N-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor. This MOSFET is engineered to deliver efficient power management and conversion in a variety of applications. With its advanced technology, the FDD24AN06LA0 is ideal for synchronous rectification in DC/DC converters, power supplies, motor drives, and other power-intensive electronic circuits.

Key Features

  • Low RDS(on): The device boasts an exceptionally low on-state resistance, resulting in reduced conduction losses and improved overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of 38A, the FDD24AN06LA0 can handle high current applications with ease.
  • Fast Switching Speed: The PowerTrench® technology enables fast switching speeds, which minimizes switching losses and is critical for high-frequency power conversion systems.
  • High Voltage Tolerance: With a drain-source voltage (VDSS) of 60V, it provides a good safety margin for most low to medium voltage applications.
  • Low Gate Charge (QG): A low gate charge ensures that the device can be driven at lower voltages, reducing the power needed to switch the MOSFET on and off.
  • Robust Thermal Performance: The package is designed for optimal thermal performance, ensuring reliability even under high temperature operating conditions.

Applications

  • DC/DC Converters
  • Power Supply Units
  • Motor Control Systems
  • Automotive Applications
  • Power Management Solutions

With its combination of low on-resistance, high current handling, and fast switching capabilities, the FDD24AN06LA0 is a versatile component that enhances the performance and efficiency of a wide range of electronic systems. ON Semiconductor's commitment to quality ensures that this MOSFET meets the rigorous standards required by industry professionals, making it a reliable choice for your power management needs.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official ON Semiconductor datasheets and product documentation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9187 $67.1545
75+ $1.5744 $118.0800
115+ $1.5252 $175.3980
160+ $1.4760 $236.1600
205+ $1.4268 $292.4940
275+ $1.2792 $351.7800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,670 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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