The 3SK263-6-TG is a state-of-the-art silicon N-Channel Dual Gate MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance electronic component is engineered to provide excellent gain control and high input impedance, making it an ideal choice for a wide range of RF applications.

Key Features

• High Gain: The 3SK263-6-TG boasts a high forward transfer admittance, which is crucial for applications requiring signal amplification.
• Low Noise: With its low noise figure, this MOSFET ensures clear signal transmission, minimizing interference and distortion.
• Dual Gate Design: The dual-gate structure allows for better control and stability of the electronic signal, providing precise modulation and demodulation capabilities.
• High-Speed Switching: The device is capable of high-speed switching, making it suitable for digital applications where rapid signal processing is essential.
• Improved Durability: The MOSFET is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring long-term reliability and performance.

Applications

The 3SK263-6-TG is versatile and can be used in various applications, including:

• RF amplifiers and oscillators
• Mixers and modulators
• TV tuners
• VHF and UHF communications equipment
• Other high-frequency signal processing tasks

Product Specifications

The 3SK263-6-TG MOSFET comes in a compact package and is characterized by the following specifications:

• Package: SOT-363 (SuperSOT™-6)
• Drain-Source Voltage (Vds): 20V
• Gate-Source Voltage (Vgs): ±10V
• Continuous Drain Current (Id): 30mA
• Total Power Dissipation (Pd): 200mW
• Operating Temperature Range: -55°C to +150°C

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The 3SK263-6-TG complies with RoHS standards, ensuring that it is free from harmful substances and suitable for use in green products.