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2SC3135T-SPA

Part No 2SC3135T-SPA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.2A 3SPA / Bipolar (BJT) Transistor PNP 50 V 200 mA 250 mW Through Hole 3-SPA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 6V
Power - Max 250 mW
Mounting Type Through Hole
Package / Case SC-72
Supplier Device Package 3-SPA
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-2SC3135T-SPA,ONSONS2SC3135T-SPA
Standard Package 1
Win Source Part Number 1139476-2SC3135T-SPA
Ultra Librarian 3D Model Ultra Librarian 2SC3135T-SPA CAD Model

Description

The 2SC3135T-SPA from ON Semiconductor is a high-performance bipolar transistor designed to meet the needs of various electronic applications. This NPN transistor is well-suited for amplification and switching purposes, making it a versatile component for designers and engineers.

Key Features:

  • High Current Gain Bandwidth Product: The device offers excellent frequency characteristics, making it suitable for applications requiring high-speed switching.
  • Low Collector-Emitter Saturation Voltage: This feature ensures lower power loss and higher efficiency, particularly beneficial for power management circuits.
  • High Collector Current: With the ability to handle a substantial current, the 2SC3135T-SPA is capable of driving larger loads, making it ideal for power applications.
  • Complementary PNP Type Available: ON Semiconductor provides a complementary PNP transistor, allowing for push-pull configurations and more complex circuit designs.

Applications:

The 2SC3135T-SPA is suitable for a wide range of applications, including:

  • Audio Amplifiers
  • Power Management Circuits
  • Signal Processing
  • Switching Regulators
  • Motor Controls

Technical Specifications:

Parameter Value
Transistor Polarity NPN
Collector-Emitter Voltage (VCEO) Specified by Manufacturer
Collector-Base Voltage (VCBO) Specified by Manufacturer
Emitter-Base Voltage (VEBO) Specified by Manufacturer
Collector Current (IC) Specified by Manufacturer
Power Dissipation (PD) Specified by Manufacturer
Operating and Storage Junction Temperature Range Specified by Manufacturer

For detailed specifications and operational parameters, refer to the official datasheet provided by ON Semiconductor. The 2SC3135T-SPA is designed to deliver reliability and performance, making it a preferred choice for industry professionals.

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