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2N697

Part No 2N697
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR | NPN GP TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 15mA, 150mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 150mA, 10V
Frequency - Transition 100MHz
Mounting Style Through Hole
Manufacturer Package TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Family Part Number 2N697
Manufacturer Pack Quantity 200
MSL Level 1 (Unlimited)
Win Source Part Number 1124214-2N697
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian 2N697 CAD Model

Description

ON Semiconductor 2N697 Bipolar Junction Transistor

The ON Semiconductor 2N697 is a high-performance bipolar junction transistor (BJT) designed for a wide range of applications requiring robust and reliable switching or amplification. This NPN transistor is recognized for its excellent performance in high-speed switching applications, making it a popular choice for designers and engineers.

Key Features:

  • High Speed: The 2N697 is designed for swift switching, allowing for efficient operation in circuits that require rapid state changes.
  • Durable: With its robust construction, the 2N697 is capable of withstanding harsh conditions, ensuring long-term reliability and stability.
  • Versatile: This component is suitable for a variety of electronic applications, including industrial, commercial, and entertainment products.
  • High Power Handling: The transistor can manage a considerable amount of power, making it ideal for driving medium to high-power circuits.

Electrical Characteristics:

  • Collector-Emitter Voltage (Vceo): The maximum voltage between the collector and emitter without breakdown is rated at 40V.
  • Collector-Base Voltage (Vcbo): The maximum collector-base voltage is 60V, providing a good safety margin for various applications.
  • Emitter-Base Voltage (Vebo): The emitter-base voltage rating is 6V, which is suitable for many signal-level tasks.
  • Collector Current (Ic): The 2N697 can handle a continuous collector current up to 500mA, making it capable of driving a wide range of loads.
  • Power Dissipation: It has a power dissipation rating of 800mW, allowing it to handle moderate levels of power without overheating.

Applications:

The 2N697 is commonly used in applications such as switching regulators, power amplifiers, and relay drivers. Its high-speed switching capability also makes it an excellent choice for digital logic circuits, pulse generators, and other timing applications. Furthermore, its robust construction makes it suitable for military and aerospace applications where reliability is paramount.

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the 2N697 is no exception. Each transistor is manufactured to meet stringent standards, ensuring that it performs to its specifications in a variety of conditions and applications.

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