ON Semiconductor 2N4401RLRA NPN Bipolar Transistor

The ON Semiconductor 2N4401RLRA is a versatile and high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for amplification and switching applications, thanks to its robust characteristics and reliable performance.

Key Features:

• Transistor Polarity: NPN - The 2N4401RLRA features an NPN polarity, making it ideal for use in negative ground configurations and for driving loads that require a high collector-emitter voltage (Vce).
• Collector-Emitter Voltage (Vceo): 40V - With a maximum collector-emitter voltage of 40V, this transistor can handle moderate voltage applications while maintaining stability and performance.
• Collector Current (Ic): 600 mA - The device supports a continuous collector current up to 600 mA, providing sufficient current handling capability for a variety of electronic circuits.
• Power Dissipation (Pd): 625 mW - The 2N4401RLRA can dissipate up to 625 milliwatts of power, ensuring efficient operation even under higher power conditions.
• DC Current Gain (hFE): 40 to 500 - This transistor offers a DC current gain range from 40 to 500, allowing for a broad range of amplification possibilities in different circuit designs.
• Operating Temperature Range: -55°C to +150°C - It is designed to operate over a wide temperature range, ensuring reliability and performance even under extreme environmental conditions.
• Packaging: The 2N4401RLRA comes in a through-hole package, specifically in an Ammo Pack, which facilitates easy handling and assembly in manufacturing processes.

Applications:

The 2N4401RLRA NPN transistor is commonly used in a variety of applications, including but not limited to:

• General-purpose switching
• Amplification circuits
• Signal processing
• Linear and digital integrated circuits
• Power management solutions

With its reliable performance and ON Semiconductor's commitment to quality, the 2N4401RLRA is an excellent choice for designers and engineers looking for a general-purpose NPN transistor that can meet the demands of a wide range of electronic devices and applications.