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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 750mV at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 1V
Maximum Power 625mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Family Part Number 2N4401
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123869-2N4401RLRA
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N4401RLRA CAD Model

Description

ON Semiconductor 2N4401RLRA NPN Bipolar Transistor

The ON Semiconductor 2N4401RLRA is a versatile and high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for amplification and switching applications, thanks to its robust characteristics and reliable performance.

Key Features:

  • Transistor Polarity: NPN - The 2N4401RLRA features an NPN polarity, making it ideal for use in negative ground configurations and for driving loads that require a high collector-emitter voltage (Vce).
  • Collector-Emitter Voltage (Vceo): 40V - With a maximum collector-emitter voltage of 40V, this transistor can handle moderate voltage applications while maintaining stability and performance.
  • Collector Current (Ic): 600 mA - The device supports a continuous collector current up to 600 mA, providing sufficient current handling capability for a variety of electronic circuits.
  • Power Dissipation (Pd): 625 mW - The 2N4401RLRA can dissipate up to 625 milliwatts of power, ensuring efficient operation even under higher power conditions.
  • DC Current Gain (hFE): 40 to 500 - This transistor offers a DC current gain range from 40 to 500, allowing for a broad range of amplification possibilities in different circuit designs.
  • Operating Temperature Range: -55°C to +150°C - It is designed to operate over a wide temperature range, ensuring reliability and performance even under extreme environmental conditions.
  • Packaging: The 2N4401RLRA comes in a through-hole package, specifically in an Ammo Pack, which facilitates easy handling and assembly in manufacturing processes.

Applications:

The 2N4401RLRA NPN transistor is commonly used in a variety of applications, including but not limited to:

  • General-purpose switching
  • Amplification circuits
  • Signal processing
  • Linear and digital integrated circuits
  • Power management solutions

With its reliable performance and ON Semiconductor's commitment to quality, the 2N4401RLRA is an excellent choice for designers and engineers looking for a general-purpose NPN transistor that can meet the demands of a wide range of electronic devices and applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
785+ $0.0830 $65.1550
1,905+ $0.0681 $129.7305
2,945+ $0.0660 $194.3700
4,050+ $0.0640 $259.2000
5,245+ $0.0617 $323.6165
7,010+ $0.0553 $387.6530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 20,000 pieces
MOQ: 685 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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