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2N2907

Part No 2N2907
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description PNP switching transistors | PNP SS GP AMP MED PWR TRANS.
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 1.6V at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 400mW
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Family Part Number 2N2907
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1123677-2N2907
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N2907 CAD Model

Description

ON Semiconductor 2N2907 PNP Bipolar Transistor

The 2N2907 is a versatile PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in innovative energy-efficient electronics. This transistor is widely recognized for its reliability and efficiency, making it an ideal choice for a range of electronic applications. The 2N2907 is designed for high-speed switching and amplification tasks, which are essential in modern electronic circuits.

With its PNP configuration, the 2N2907 is complementary to NPN transistors such as the 2N2222, allowing for use in push-pull amplifier designs and other applications that require a matched pair of transistors. This transistor can handle a continuous collector current up to 600 mA, making it suitable for moderate power applications.

The 2N2907 features a VCEO (Collector-Emitter Voltage) of 60V, which ensures that it can handle a wide range of operating conditions in various circuits. Its power dissipation is rated at 400 mW, providing a good balance between power handling and size. The device operates effectively within a junction temperature range of -55°C to +150°C, ensuring stable performance across a broad spectrum of environmental conditions.

Key electrical characteristics of the 2N2907 include a minimum DC current gain (hFE) of 100 at a collector current of 10 mA, which indicates its efficiency in current amplification. This makes it an excellent choice for analog signal processing where gain consistency is crucial.

ON Semiconductor has packaged the 2N2907 in a TO-18 metal can, which not only provides a robust physical enclosure but also enhances thermal performance. The compact size and the three-lead configuration of the 2N2907 make it easy to incorporate into a variety of printed circuit board (PCB) designs. It is commonly used in low-power amplifiers, switching devices, and as a driver for larger transistors in high-power applications.

Whether you are designing consumer electronics, industrial control systems, or experimenting with DIY electronics projects, the ON Semiconductor 2N2907 transistor is a reliable and efficient component that will meet your needs for a PNP transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0335 $57.7875
4,170+ $0.0277 $115.5090
6,525+ $0.0266 $173.5650
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,960 pieces
MOQ: 1725 pcs
Order Increment : 1 pcs
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