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BUK7624-55

Part No BUK7624-55
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description TrenchMOS transistor Standard level FET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer NXP
Win Source Part Number 1156140-BUK7624-55
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK7624-55 CAD Model

Description

The BUK7624-55 is a high-performance, N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This power MOSFET is engineered to deliver exceptional efficiency and power density, making it an ideal choice for a wide range of applications, including automotive systems, power management circuits, and high-speed switching applications.

Key Features

  • Low On-State Resistance: The BUK7624-55 boasts an extremely low on-state resistance (RDS(on)), minimizing conduction losses and enhancing overall efficiency.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, reducing switching losses and improving performance.
  • High Current Capacity: It is capable of handling high currents, making it a reliable choice for power-intensive applications.
  • Thermal Performance: The BUK7624-55's excellent thermal characteristics ensure stable operation even under high-temperature conditions.
  • Ruggedness: The device is designed to withstand harsh operating conditions, providing reliable performance in demanding environments.

Applications

  • Automotive applications including electric power steering, DC/DC converters, and motor drives
  • Power supply circuits for both industrial and consumer electronics
  • Switch-mode power supplies (SMPS)
  • Load switches and battery management systems

Technical Specifications

Parameter Value
Drain-source voltage (VDS) 55 V
Continuous drain current (ID) 75 A
Power dissipation (PD) 110 W
Operating temperature range -55°C to +175°C

The BUK7624-55 from NXP is a testament to the company's commitment to providing innovative semiconductor solutions that meet the evolving needs of the electronics industry. With its robust design and outstanding electrical characteristics, this MOSFET is poised to drive efficiency and reliability in a variety of high-performance applications.

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