The NXP BF997 is a state-of-the-art silicon N-channel dual-gate MOSFET that is designed to meet the rigorous demands of RF (Radio Frequency) amplification and mixing applications. This product is a testament to NXP's commitment to providing high-performance components for the electronics industry.

Key Features

• High Frequency Performance: The BF997 is optimized for high-frequency operations, making it an ideal choice for applications in the VHF and UHF bands.
• Dual-Gate Design: Its dual-gate configuration allows for excellent gain control and high input impedance, which is crucial for sensitive RF front-end circuits.
• Low Noise Figure: The device boasts a low noise figure, which is essential for clear signal amplification in receivers and other sensitive RF equipment.
• Enhanced Gain: With the ability to provide high forward transfer admittance, the BF997 offers enhanced gain for effective signal processing.
• Surface-Mount Package: It comes in a compact SOT143B surface-mount package, which is suitable for automated assembly processes and space-constrained applications.

Applications

The BF997 is widely used in a variety of RF applications, including:

• RF amplifiers in telecommunication systems
• TV tuners and professional RF equipment
• VHF/UHF mixers and oscillators
• Other RF circuits requiring low noise and high gain

Technical Specifications

Parameter Value Frequency Range Up to 1 GHz Drain-Source Voltage (Vds) 20 V Forward Transconductance (gfs) 30 mS Gate-Source Voltage (Vgs) ±8 V Noise Figure (NF) 1.2 dB at 800 MHz

With its high-performance characteristics and versatility, the NXP BF997 is a top choice for engineers and designers working on advanced RF solutions. Its reliability and efficiency make it a valuable component in the creation of high-quality electronic devices.