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Category Discrete Semiconductor Products
Family RFFETs
Manufacturer NXP
Win Source Part Number 234908-BF997
Popularity Medium
Supply and Demand Status Limited
Family Name BF997
Introduction Date April 01, 1991
Country of Origin China, Thailand
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian BF997 CAD Model

Description

The NXP BF997 is a state-of-the-art silicon N-channel dual-gate MOSFET that is designed to meet the rigorous demands of RF (Radio Frequency) amplification and mixing applications. This product is a testament to NXP's commitment to providing high-performance components for the electronics industry.

Key Features

  • High Frequency Performance: The BF997 is optimized for high-frequency operations, making it an ideal choice for applications in the VHF and UHF bands.
  • Dual-Gate Design: Its dual-gate configuration allows for excellent gain control and high input impedance, which is crucial for sensitive RF front-end circuits.
  • Low Noise Figure: The device boasts a low noise figure, which is essential for clear signal amplification in receivers and other sensitive RF equipment.
  • Enhanced Gain: With the ability to provide high forward transfer admittance, the BF997 offers enhanced gain for effective signal processing.
  • Surface-Mount Package: It comes in a compact SOT143B surface-mount package, which is suitable for automated assembly processes and space-constrained applications.

Applications

The BF997 is widely used in a variety of RF applications, including:

  • RF amplifiers in telecommunication systems
  • TV tuners and professional RF equipment
  • VHF/UHF mixers and oscillators
  • Other RF circuits requiring low noise and high gain

Technical Specifications

Parameter Value Frequency Range Up to 1 GHz Drain-Source Voltage (Vds) 20 V Forward Transconductance (gfs) 30 mS Gate-Source Voltage (Vgs) ±8 V Noise Figure (NF) 1.2 dB at 800 MHz

With its high-performance characteristics and versatility, the NXP BF997 is a top choice for engineers and designers working on advanced RF solutions. Its reliability and efficiency make it a valuable component in the creation of high-quality electronic devices.

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