The NXP BAT85 is a highly efficient, small signal Schottky diode that is designed to meet a broad range of requirements in various electronic applications. This diode is particularly well-suited for fast switching and low voltage drop applications due to its metal to silicon junction diode featuring high breakdown, low turn-on voltage, and fast switching.

Key Features

• Low Forward Voltage Drop: The BAT85 boasts a low forward voltage drop which enhances power efficiency and minimizes heat generation, making it ideal for power-sensitive circuits.
• Fast Switching Speed: With its Schottky barrier design, the BAT85 provides fast switching capabilities that are essential for high-frequency applications.
• High Surge Current Capability: This diode can handle high surge currents, offering robust performance during transient conditions.
• Guard Ring Protection: The BAT85 features a guard ring for stress protection, which enhances its reliability and longevity in demanding conditions.
• Lead-Free and RoHS Compliant: Adhering to environmental standards, the BAT85 is lead-free and RoHS compliant, making it suitable for use in green products.

Applications

The BAT85 is versatile and can be used in various applications, including:

• Switching power supplies
• Converters
• Free-wheeling diodes
• Reverse battery protection
• Charge storage circuits
• High-frequency inverters

Specifications

• Package: DO-35
• Peak Repetitive Reverse Voltage: 30 V
• Continuous Forward Current: 200 mA
• Maximum Forward Voltage Drop: 1 V at 100 mA
• Operating Temperature Range: -65°C to +125°C

The NXP BAT85 is a reliable choice for designers looking for a Schottky diode that provides efficient operation, fast switching, and a compact form factor. Its robust design and compliance with environmental standards make it a sustainable and future-proof component for a wide array of electronic designs.