The NXP BAT82 is a high-performance Schottky barrier diode designed to meet the needs of a wide range of applications. Known for its low forward voltage drop and fast switching capabilities, the BAT82 is an ideal choice for high-efficiency power management systems, and it is especially well-suited for portable and compact electronic devices.

Key Features

• Low Forward Voltage Drop: The BAT82 boasts a very low forward voltage drop, which enhances overall system efficiency by minimizing power loss during diode conduction.
• High Switching Speed: With its fast switching action, the BAT82 is capable of operating at high frequencies, making it suitable for applications that require quick response times.
• Low Leakage Current: The diode's low leakage current ensures minimal power loss when the diode is in the off state, thereby improving the energy efficiency of the overall system.
• Small Package Size: The compact packaging of the BAT82 allows for its use in space-constrained applications without sacrificing performance.

Applications

The versatility of the NXP BAT82 allows it to be used in a variety of applications, including:

• Power supply design
• DC-DC converters
• Reverse polarity protection
• Low voltage rectification
• Switching power supplies
• Charge pump circuits
• Free-wheeling diodes in converters and motor control circuits

Technical Specifications

• Peak Repetitive Reverse Voltage (V_RRM): 30V
• Average Rectified Forward Current (I_F(AV)): 200mA
• Forward Voltage Drop (V_F): 0.385V at I_F = 100mA
• Reverse Leakage Current (I_R): 2µA at V_R = 25V

Quality and Reliability

NXP is committed to delivering high-quality products, and the BAT82 is no exception. It is manufactured in state-of-the-art facilities, ensuring that each diode meets rigorous standards for performance and reliability.