The NXP BAS28/G is a high-speed switching diode designed to meet the stringent requirements of fast switching applications. This diode is part of NXP's extensive range of semiconductor products, known for their reliability and performance. The BAS28/G is encapsulated in a small SOT-143B surface-mounted package, making it suitable for high-density circuit boards where space is at a premium.
Key Features
- Fast Switching Speed: The BAS28/G diode offers rapid switching capabilities, with a reverse recovery time that ensures efficient operation in high-frequency circuits.
- Low Capacitance: This diode features a low diode capacitance, which minimizes charge storage and enhances the overall speed of the device.
- High Reverse Voltage: With a high reverse voltage, the BAS28/G can withstand significant voltage levels without breaking down, making it suitable for various electronic applications.
- Low Leakage Current: The leakage current of this diode is minimal, which helps to reduce power loss and improve the energy efficiency of the circuit.
- Surface-Mount Package: Its SOT-143B package is designed for surface mounting, facilitating automated assembly processes and saving space on printed circuit boards (PCBs).
Applications
The NXP BAS28/G high-speed switching diode is ideal for a range of applications where speed and efficiency are critical. It is commonly used in:
- High-frequency inverters
- Switching power supplies
- Signal processing
- High-speed logic circuits
- Protection circuits
Product Specifications
Parameter
Value
Package
SOT-143B
Reverse Voltage (V<sub>R)
85 V
Forward Current (I<sub>F)
200 mA
Reverse Recovery Time (t<sub>rr)
4 ns
Diode Capacitance (C<sub>d)
2 pF
Leakage Current (I<sub>R)
100 nA
For detailed information and complete specifications, designers and engineers should refer to the official NXP datasheets and product guides. The NXP BAS28/G is a testament to NXP's commitment to providing high-quality components for advanced electronic solutions.
