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Same model may have multiple batches, images only for reference.
PSMN2R9-30MLC,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R9-30MLC,115

Part No PSMN2R9-30MLC,115
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description MOSFET N-CH 30V 70A LFPAK33
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia USA Inc.
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.9mOhm at 25A, 10V
Vgs(th) (Maximum) at Id 2.15V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 36.1nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2419pF at 15V
Power Dissipation (Maximum) 91W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package LFPAK33
Manufacturer Package SOT-1210, 8-LFPAK33
Manufacturer Pack Quantity 1,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803677-PSMN2R9-30MLC,115
Ultra Librarian 3D Model Ultra Librarian PSMN2R9-30MLC,115 CAD Model

Description

The Nexperia USA Inc. PSMN2R9-30MLC,115 MOSFET is a high-performance N-Channel FET that can operate at temperatures ranging from -55°C to 175°C.

  • Maximum Power Dissipation: 91W (Tc)
  • Drain to Source Voltage (Vdss): 30V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Supplier Device Package: LFPAK33
  • Manufacturer Package: SOT-1210, 8-LFPAK33
  • Rds On (Maximum) @ Id, Vgs: 2.9mOhm @ 25A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 36.1nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2419pF @ 15V
  • Continuous Drain Current (Id) @ 25°C: 70A (Tc)
  • Vgs(th) (Maximum) @ Id: 2.15V @ 1mA
  • Maximum Vgs: ±20V

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