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NXV55UNR

Part No NXV55UNR
Manufacturer Nexperia USA Inc.
Catalog Transistors – FETs, MOSFETs – Single
Description NXV55UN/SOT23/TO-236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 66mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 352 pF @ 15 V
Power Dissipation (Max) 340mW (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model Ultra Librarian NXV55UNR CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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