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Same model may have multiple batches, images only for reference.
BUK6C3R3-75C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK6C3R3-75C,118

Part No BUK6C3R3-75C,118
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description MOSFET N-CH 75V 181A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 181A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.4mOhm at 90A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.8V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 253nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 15800pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 752437-BUK6C3R3-75C,118
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK6C3R3-75C,118 CAD Model

Description

The BUK6C3R3-75C,118 is an N-channel MOSFET from Nexperia USA Inc.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 181A
  • Rds On (Maximum) @ Id, Vgs: 3.4mOhm @ 90A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 253nC @ 10V
  • Mounting: SMD
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Use: ideal for use in discrete semiconductor products.

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