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2N3829

Part No 2N3829
Manufacturer New Jersey Semi-Conductor Products, Inc.
Catalog Hard To Find
Description P-N-P SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer New Jersey Semi-Conductor Products, Inc.
Win Source Part Number 1123796-2N3829
Manufacturer Homepage www.njsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N3829 CAD Model

Description

The 2N3829 is a silicon N-channel junction field-effect transistor (JFET) manufactured by New Jersey Semi-Conductor Products, Inc. It is designed for low-noise amplifier applications, particularly in the VHF and UHF frequency ranges. The 2N3829 offers high gain and low noise figure, making it suitable for sensitive receiver front-ends and high-impedance amplifier circuits.

Applications

  • VHF/UHF Amplifiers: Used in radio frequency amplifiers operating in the VHF (Very High Frequency) and UHF (Ultra High Frequency) bands.
  • Low-Noise Amplifiers: Employed in sensitive receiver front-ends to amplify weak signals with minimal added noise.
  • Mixers: Integrated into mixer circuits for frequency conversion in communication systems.
  • Oscillators: Used in oscillator circuits for generating stable frequency signals.
  • High-Impedance Amplifiers: Suitable for amplifying signals from high-impedance sources.

Features

  • N-Channel JFET: Utilizes N-channel JFET technology for low-noise performance.
  • High Gain: Provides substantial voltage gain for efficient signal amplification.
  • Low Noise Figure: Minimizes added noise, ensuring high signal-to-noise ratio in amplifier circuits.
  • High Input Impedance: Offers high input impedance for compatibility with high-impedance sources.
  • TO-18 Package: Encased in a durable TO-18 metal can package.

Benefits

  • Low-Noise Amplification: Provides low-noise amplification for sensitive signals.
  • Enhanced Signal Reception: Improves signal reception in weak signal environments.
  • Improved Circuit Performance: Enhances the performance of amplifier and mixer circuits.
  • Versatile Application: Suitable for a wide range of RF and low-noise applications.
  • Easy Integration: Compatible with standard electronic circuits and components.

Additional Details

The 2N3829 typically features a gate-source breakdown voltage (VGS) of around 30V, a drain current (ID) of around 20mA, and a power dissipation of about 300mW. Its typical noise figure is around 2 dB. Always consult the official datasheet from New Jersey Semi-Conductor Products, Inc. for precise specifications and application guidelines.

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