The CM1200HCB-34N is an insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for high-power switching applications. As an IGBT module, it combines the advantages of both MOSFETs and bipolar junction transistors. It's an End-of-Life product.

Applications

• High power inverters
• Motor drives
• Traction applications
• Induction heating systems
• Welding power supplies

Features

• High blocking voltage capability
• Low saturation voltage
• High-speed switching
• Isolated baseplate for easy mounting
• Integrated gate drive circuit (in some versions)

Benefits

• Improved efficiency in power conversion systems
• Reduced switching losses
• Simplified system design
• Enhanced reliability
• Compact size

Specifications (Typical)

• Collector-Emitter Voltage (Vces): 1700V (This can vary; refer to datasheet)
• Collector Current (Ic): 1200A (This can vary; refer to datasheet)
• Gate-Emitter Voltage (Vges): ±20V
• Operating Temperature: -40°C to +150°C
• Module Type: IGBT

Note: Always consult the official Mitsubishi datasheet for precise specifications and application guidelines. As this product is listed as End-of-Life, availability may be limited.