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Same model may have multiple batches, images only for reference.
JANSR2N7389 Real Image
Same model may have multiple batches, images only for reference.

JANSR2N7389

Part No JANSR2N7389
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | P CHANNEL MOSFET TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tray
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 6.5A
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Maximum) at Id, Vgs 350mOhm at 6.5A, 12V
Gate Source Voltage(th) (Maximum) at Id 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 12V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-205AF (TO-39)
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level Not Applicable
Win Source Part Number 1191408-JANSR2N7389
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANSR2N7389 CAD Model

Description

The JANSR2N7389 is a P-Channel MOSFET designed by Microsemi Corporation.

  • Manufacturer: Microsemi Corporation
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 6.5A
  • On-Resistance: 350mOhm @ 6.5A and 12V gate-source voltage
  • Package: TO-205AF (TO-39)
  • Power Dissipation: 25W
  • Gate Charge (Qg): 45nC @ 12V gate-source voltage
  • Gate-Source Voltage(th): 4V @ 1mA
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete and has a limited supply and demand

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