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Same model may have multiple batches, images only for reference.
APT80GA90LD40 Real Image
Same model may have multiple batches, images only for reference.

APT80GA90LD40

Part No APT80GA90LD40
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description High Speed PT IGBT
Datasheet
APT80GA90LD40 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 900V
Current - Collector (Ic) (Maximum) 145A
Current - Collector Pulsed (Icm) 239A
Vce(on) (Maximum) @ Vge, Ic 3.1V @ 15V, 47A
Power - Max 625W
Switching Energy 1652μJ (on), 1389μJ (off)
Input Type Standard
Gate Charge 200nC
Td (on/off) @ 25°C 18ns/149ns
Test Condition 600V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264
Win Source Part Number 1146908-APT80GA90LD40
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name APT80GA90LD40
Introduction Date May 22, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT80GA90LD40 CAD Model

Description

The APT80GA90LD40 from Microsemi Corporation is a POWER MOS 8 series IGBT with a maximum power rating of 625W.

  • Reverse Recovery Time: 25ns
  • Gate Charge: 200nC
  • Mounting: Through hole
  • Packaging: Tube
  • Manufacturer Package: TO-264-3, TO-264AA
  • Current Rating: 145A
  • Voltage Rating: 900V
  • Vce(on): 3.1V @ 15V, 47A
  • Operating Temperature Range: Not specified
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Manufacturer Homepage: www.microsemi.com

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