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Same model may have multiple batches, images only for reference.
APT75GP120B2G Real Image
Same model may have multiple batches, images only for reference.

APT75GP120B2G

Part No APT75GP120B2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description Power Semiconductors Power Modules
Datasheet
APT75GP120B2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 300A
Vce(on) (Maximum) @ Vge, Ic 3.9V @ 15V, 75A
Power - Max 1042W
Switching Energy 1620μJ (on), 2500μJ (off)
Input Type Standard
Gate Charge 320nC
Td (on/off) @ 25°C 20ns/163ns
Test Condition 600V, 75A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3 Variant
Win Source Part Number 1146894-APT75GP120B2G
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT75GP120B2
Introduction Date September 03, 1997
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT75GP120B2G CAD Model

Description

The 1146894-APT75GP120B2G is a PT IGBT transistor from Microsemi Corporation.

  • Maximum Power: 1042W
  • Current Collector Pulsed: 300A
  • Voltage Collector-Emitter Breakdown: 1200V
  • Gate Charge: 320nC
  • Package: TO-247-3 Variant
  • Temperature Range: -55°C to 150°C
  • Product Status: Not obsolete

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