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Same model may have multiple batches, images only for reference.
APT50GN60BG Real Image
Same model may have multiple batches, images only for reference.

APT50GN60BG

Part No APT50GN60BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 107A 366W TO247
Datasheet
APT50GN60BG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 107A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 1.85V @ 15V, 50A
Maximum Power Dissipation 366W
Total Switching Energy(Ets) 1185μJ (on), 1565μJ (off)
Input Type Standard
Gate Charge 325nC
Turn-on and Turn-off delay time 20ns/230ns
Testing Conditions 400V, 50A, 4.3 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018071-APT50GN60BG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT50GN60BG CAD Model

Description

The Microsemi Corporation APT50GN60BG IGBT is a high-quality insulated-gate bipolar transistor designed for use in electronic circuits.

  • Mounting Type: Through-Hole
  • Maximum Current Collector: 107A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 366W
  • Pulsed Collector Current: 150A
  • Collector-Emitter Saturation Voltage (Max): 1.85V @ 15V, 50A
  • Total Switching Energy (Ets): 1185μJ (on), 1565μJ (off)
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 230ns
  • Case/Package: TO-247 [B]
  • Testing Conditions: 400V, 50A, 4.3 Ohm, 15V

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