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Same model may have multiple batches, images only for reference.
APT50GN60BDQ2G Real Image
Same model may have multiple batches, images only for reference.

APT50GN60BDQ2G

Part No APT50GN60BDQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 107A 366W TO247
Datasheet
APT50GN60BDQ2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 107A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 1.85V @ 15V, 50A
Maximum Power Dissipation 366W
Total Switching Energy(Ets) 1185μJ (on), 1565μJ (off)
Input Type Standard
Gate Charge 325nC
Turn-on and Turn-off delay time 20ns/230ns
Testing Conditions 400V, 50A, 4.3 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018070-APT50GN60BDQ2G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT50GN60BDQ2G CAD Model

Description

The Microsemi Corporation APT50GN60BDQ2G is a Trench Field Stop IGBT designed for use in a variety of applications.

  • Manufacturer: Microsemi Corporation
  • Type: Trench Field Stop IGBT
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 107A
  • Collector-Emitter Saturation Voltage: 1.85V @ 15V, 50A
  • Total Switching Energy (Ets): 1185μJ (on), 1565μJ (off)
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 230ns
  • Package: TO-247 [B]
  • Maximum Power Dissipation: 366W
  • Gate Charge: 325nC
  • Supply and Demand: Balanced

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