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Same model may have multiple batches, images only for reference.
APT30GN60BDQ2G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT30GN60BDQ2G

Part No APT30GN60BDQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 63A 203W TO247
Datasheet
APT30GN60BDQ2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 63A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 1.9V @ 15V, 30A
Maximum Power Dissipation 203W
Total Switching Energy(Ets) 525μJ (on), 700μJ (off)
Input Type Standard
Gate Charge 165nC
Turn-on and Turn-off delay time 12ns/155ns
Testing Conditions 400V, 30A, 4.3 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018023-APT30GN60BDQ2G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT30GN60BDQ2G CAD Model

Description

The APT30GN60BDQ2G is a Trench Field Stop IGBT used in various electronic devices. Manufactured by Microsemi Corporation, this IGBT comes in tube/rail packaging and has a medium popularity rating.

  • Packaging: Tube/Rail
  • Popularity: Medium
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 63A
  • Total Switching Energy (on): 525μJ
  • Total Switching Energy (off): 700μJ
  • Collector-Emitter Saturation Voltage (Max): 1.9V @ 15V, 30A
  • Turn-On Delay Time: 12ns
  • Turn-Off Delay Time: 155ns
  • Temperature Range: -55°C to 175°C (TJ)

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