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Same model may have multiple batches, images only for reference.
APT25GP120BDQ1G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT25GP120BDQ1G

Part No APT25GP120BDQ1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 69A 417W TO247
Datasheet
APT25GP120BDQ1G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 69A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 3.9V @ 15V, 25A
Maximum Power Dissipation 417W
Total Switching Energy(Ets) 500μJ (on), 440μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 12ns/70ns
Testing Conditions 600V, 25A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 051446-APT25GP120BDQ1G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT25GP120BDQ1G CAD Model

Description

APT25GP120BDQ1G High-Power IGBT Module

The APT25GP120BDQ1G is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-efficiency power applications. It combines the advantages of fast switching speed and low conduction loss.

  • Applications/Projects:
    • Industrial Motor Drives
    • Electric Vehicle Inverters
    • Solar Inverters
    • Welding Equipment
  • Features and Benefits:
    • High Efficiency: Optimized for reduced power loss.
    • Fast Switching: Supports high-speed operations in demanding setups.
    • Reliable Operation: Withstands harsh environments and high operating temperatures.
  • Additional Details:
    • Package Type: SOT-227
    • Voltage Rating: 1200V
    • Manufacturer: Advanced Power Technology

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