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Same model may have multiple batches, images only for reference.
2N6804 Microsemi Corporation
Same model may have multiple batches, images only for reference.

2N6804

Part No 2N6804
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description P-CHANNEL MOSFET | MOSFET P-CH 100V TO-204AA TO-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 360mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 75W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-204AA (TO-3)
Manufacturer Package TO-204AA, TO-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124205-2N6804
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6804 CAD Model

Description

This Microsemi Corporation MOSFET with P-Channel transistor polarity is a high-performance electronic component used in various applications.

  • Drive Voltage: 10V
  • Maximum Power Dissipation: 4W
  • Vds: 100V
  • Id: 11A
  • Rds On: 360mOhm @ 11A, 10V
  • Gate Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 29nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete
  • Supply and Demand Status: Limited

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