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2N6770

Name: 2N6770
Brand: Microsemi Corporation
SKU: 541506
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	2N6770
Manufacturer	Microsemi Corporation
Catalog	FETs - Single
Description	N-Channel Power MOSFETs, 12A, 450V/500V \| MOSFET N-CH 500V 12A TO-204AE
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	12A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	500mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	120nC at 10V
Gate Source Voltage (Maximum)	±20V
Power Dissipation (Maximum)	4W, 150W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-3
Manufacturer Package	TO-204AE
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	1124194-2N6770
Manufacturer Homepage	www.fairchildsemi.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian 2N6770 CAD Model

Alternative Products

Description

The Microsemi Corporation 2N6770 is an N-channel MOSFET transistor that is designed for use in a range of applications, including discrete semiconductor products.

Drain-Source Breakdown Voltage: 500V
Continuous Drain Current: 12A
Performance: High-performance transistor that is ideal for use in a range of applications
Usability: Easy to install and use
Supply: Limited supply

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$128.1854	$128.1854
2+	$124.0505	$248.1010
3+	$119.9156	$359.7468
4+	$107.5109	$430.0436

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,000 pieces

Order Increment : 1 pcs

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2N6770

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