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Same model may have multiple batches, images only for reference.
1N5803 Real Image
Same model may have multiple batches, images only for reference.

1N5803

Part No 1N5803
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP | DIODE GEN PURP 75V 1A AXIAL
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 75V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 875mV at 1A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 25ns
Current - Reverse Leakage at Vr 1μA at 75V
Capacitance at Vr, F 25pF at 10V, 1MHz
Mounting Style Through Hole
Manufacturer Package A, Axial
Operating Temperature - Junction -65°C ~ 175°C
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1122013-1N5803
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 1N5803 CAD Model

Description

The Microsemi Corporation 1N5803 is a fast recovery diode that is designed for use in discrete semiconductor products.

  • Current Rating: 1A
  • Reverse Recovery Time: 25ns
  • Package: A, Axial
  • Mounting: Through Hole
  • Maximum DC Reverse Voltage: 75V
  • Maximum Forward Voltage: 875mV @ 1A
  • Current Leakage: 1μA @ 75V
  • Capacitance: 25pF @ 10V, 1MHz

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