The Micron MT53E512M64D4HJ-046 AAT:D is a DDR4 SDRAM component designed for applications that require a combination of high performance, low power consumption, and robust operation in a wide range of environments.

Applications

• Automotive Applications (Infotainment, ADAS)
• Industrial Automation
• Embedded Systems
• Networking Equipment
• Telecommunications Infrastructure

Features

• Capacity: 4Gb (512M x 64)
• Interface: DDR4 SDRAM
• Data Rate: Up to 2133 MT/s
• Operating Voltage: 1.2V
• Temperature Range: -40°C to +105°C (Automotive Grade)
• CAS Latency (CL): Specified in the part number's timing parameters
• Burst Length: 8
• On-Die Termination (ODT): Improves signal integrity.
• Write CRC: Enhances data reliability through error detection.
• Lead-Free and RoHS Compliant
• Package: FBGA

Benefits

• Wide Temperature Range: Designed for reliable operation in extreme temperatures, making it suitable for automotive and industrial applications.
• High Bandwidth: DDR4 technology enables fast data transfer rates, boosting overall system performance.
• Low Power Consumption: Operates at 1.2V, minimizing power consumption and heat generation.
• Improved Signal Integrity: On-Die Termination (ODT) minimizes signal reflections, ensuring reliable data transfer even at high speeds.
• Enhanced Data Reliability: Write CRC feature ensures data integrity through error detection during write operations.

Technical Specifications

The MT53E512M64D4HJ-046 AAT:D is compliant with JEDEC standards for DDR4 SDRAM. It supports various timing parameters and configurations. This component is manufactured using advanced process technology, which enhances reliability and lowers power consumption. Detailed timing specifications, electrical characteristics, and package dimensions are available in the Micron datasheet.