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MT46V64M4P-6T:G

Part No MT46V64M4P-6T:G
Manufacturer Micron Technology Inc.
Catalog DDR
Description LPDDR-333 64Mx4 Pb-Free
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Series *
Win Source Part Number 943478-MT46V64M4P-6T:G
Ultra Librarian 3D Model Ultra Librarian MT46V64M4P-6T:G CAD Model

Description

The MT46V64M4P-6T:G is a Double Data Rate (DDR) SDRAM component manufactured by Micron Technology Inc. This memory chip is designed for applications requiring high bandwidth and low latency, making it appropriate for a variety of computing and embedded systems. It has a capacity of 64Mb, organized as 16M x 4 bits, and operates at a data rate of up to 166 MHz, providing a bandwidth of up to 333 Mbps.

Applications

  • Graphics cards
  • Networking equipment (routers, switches)
  • Digital signal processing (DSP) systems
  • Embedded systems requiring high-speed memory
  • Consumer electronics

Features

  • Double data rate (DDR) architecture: Enables data transfer on both rising and falling edges of the clock signal, effectively doubling the bandwidth compared to single data rate SDRAM.
  • Data rate of up to 166 MHz: Provides a high data transfer rate, supporting demanding applications.
  • 64Mb density: Offers a larger memory capacity for more complex applications.
  • 16M x 4 organization: Allows for efficient memory access and data manipulation.
  • Differential clock inputs (CK and /CK): Enhance noise immunity and signal integrity.
  • Double data strobe (DQS): Facilitates accurate data capture and timing.
  • On-chip DLL (Delay-Locked Loop): Ensures accurate timing and synchronization.
  • 8 internal banks: Allows for concurrent memory operations, improving overall performance.
  • Precharge and power-down modes: Conserves power when the device is not actively being used.
  • Lead-free construction: Complies with environmental regulations.

Benefits

  • Increased bandwidth: The DDR architecture provides significantly higher bandwidth compared to traditional SDRAM, enabling faster data processing.
  • Improved performance: The high data rate and efficient memory organization contribute to improved system performance in demanding applications.
  • Larger memory capacity: The 64Mb density allows for storing more data, enabling more complex and feature-rich applications.
  • Reduced power consumption: Power-down modes help minimize power consumption when the device is idle.
  • Enhanced reliability: Differential clock inputs and on-chip DLL improve signal integrity and timing accuracy, contributing to overall system reliability.

Additional Details

The MT46V64M4P-6T:G operates at a voltage of 2.5V. It is typically available in a TSOP package. The -6T indicates the speed grade of the device. The ":G" is likely a manufacturing or testing identifier.

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