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MT41K128M16JT-107:G

Part No MT41K128M16JT-107:G
Manufacturer Micron Technology Inc.
Catalog DDR
Description DDR3-1866 128Mx16 (2Gb) 1.35V
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ECAD Module
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Categories Memory
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Win Source Part Number 941306-MT41K128M16JT-107:G
Ultra Librarian 3D Model Ultra Librarian MT41K128M16JT-107:G CAD Model

Description

The MT41K128M16JT-107:G is a DDR3L SDRAM (Double Data Rate 3 Low Voltage Synchronous DRAM) module produced by Micron Technology Inc. This component is designed to offer a balance of high-speed memory access and low power consumption, making it suitable for a variety of applications. Organized as 128Mb x 16, it has a total capacity of 2 Gigabit (2Gb) or 256 Megabytes (MB). The DDR3L designation signifies its operation at a reduced voltage of 1.35V, enhancing energy efficiency.

Applications:

  • Networking Equipment: Used in routers, switches, and other networking devices to facilitate high-speed data transfer and packet processing.
  • Industrial Computing: Integrated into industrial PCs, programmable logic controllers (PLCs), and other industrial automation equipment requiring reliable memory performance.
  • Embedded Systems: Employed in single-board computers (SBCs), system-on-modules (SOMs), and other embedded applications where memory bandwidth and power efficiency are critical.
  • Consumer Electronics: Found in smart TVs, set-top boxes, gaming consoles, and other consumer devices to enhance multimedia performance.
  • Automotive Electronics: Utilized in automotive infotainment systems, advanced driver-assistance systems (ADAS), and other vehicle electronics applications.

Features:

  • DDR3L Technology: Operates at a lower voltage of 1.35V, reducing power consumption compared to standard DDR3.
  • High Speed: Supports data transfer rates up to 933 MT/s, providing fast memory access for demanding applications.
  • 8n-Prefetch Architecture: Improves data throughput by prefetching data in blocks of eight words.
  • On-Die Termination (ODT): Reduces signal reflections and enhances signal integrity at high speeds.
  • Write Leveling: Optimizes write timing to ensure data reliability and prevent data corruption.
  • RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Benefits:

  • Energy Efficiency: Reduced power consumption extends battery life in portable devices and lowers operating costs in data centers and other environments.
  • Enhanced Performance: High data transfer rates enable faster application loading and smoother multitasking.
  • Improved Reliability: Advanced features like ODT and write leveling contribute to data integrity and system stability.
  • Reduced Heat Generation: Lower power consumption translates to less heat, simplifying thermal management and potentially extending component lifespan.
  • Long-Term Availability: Designed for durability and long-term supply, ensuring reliable component sourcing for manufacturers.

Additional Details:

The MT41K128M16JT-107:G typically comes in a FBGA (Fine-pitch Ball Grid Array) package for efficient board mounting and space utilization. The suffix ':G' likely indicates specific testing or screening criteria applied to the module, potentially related to temperature or performance characteristics. It includes features such as asynchronous reset and ZQ calibration to optimize signal integrity and ensure robust operation under various conditions. The '-107' portion of the part number indicates a speed grade, generally corresponding to a 933 MHz clock rate (DDR3L-1866). The module's compliance with JEDEC standards facilitates easy integration into a wide range of applications.

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