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MT29F512G08CMCCBH7-6R:C

Part No MT29F512G08CMCCBH7-6R:C
Manufacturer Micron Technology Inc.
Catalog Flash
Description IC FLASH 512GBIT PAR 152TBGA
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Features FLASH - NAND (MLC) Memory IC 512Gb (64G x 8) Parallel 166 MHz 152-TBGA (14x18)
Manufacturer Micron Technology Inc.
Package Tray
Part Status Obsolete
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting Surface Mount
Package 152-TBGA
Case / Package 152-TBGA (14x18)
Family Name MT29F512G08
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Quantity per package 980
Popularity High
Supply and Demand Status Balance
Win Source Part Number 928266-MT29F512G08CMCCBH7-6R:C
Ultra Librarian 3D Model Ultra Librarian MT29F512G08CMCCBH7-6R:C CAD Model

Description

The MT29F512G08CMCCBH7-6R:C is a high-performance NAND flash memory device manufactured by Micron Technology. This device is part of Micron's extensive portfolio of memory solutions, offering high density and fast data access for a variety of embedded and storage applications.

Applications

  • Solid State Drives (SSDs): Used as the primary storage medium in SSDs for high-speed data storage and retrieval.
  • Embedded Systems: Integrated into embedded systems requiring non-volatile memory for code and data storage.
  • Mobile Devices: Employed in smartphones, tablets, and other mobile devices for storage of operating systems, applications, and user data.
  • Industrial Automation: Utilized in industrial control systems for storing configuration data and program code.
  • Networking Equipment: Integrated into routers, switches, and other networking devices for storing firmware and configuration settings.

Features

  • High Density: Offers a large storage capacity of 512Gb (64GB), suitable for storing large amounts of data.
  • NAND Flash Technology: Utilizes NAND flash memory technology for high-speed read and write operations.
  • ONFI Interface: Compliant with the Open NAND Flash Interface (ONFI) standard for seamless integration with controllers.
  • Multi-Level Cell (MLC) Technology: Employs MLC technology to store multiple bits per cell, increasing density and reducing cost.
  • Error Correction Code (ECC): Integrated ECC engine ensures data integrity and reliability.
  • Advanced Wear Leveling: Implements advanced wear leveling algorithms to extend the lifespan of the memory.

Benefits

  • High Performance: Provides fast data access and transfer rates, improving system performance.
  • Large Storage Capacity: Enables storage of large amounts of data in a compact form factor.
  • Reliable Data Storage: ECC and wear leveling features ensure data integrity and longevity.
  • Cost-Effective Solution: MLC technology reduces the cost per bit, making it a cost-effective storage solution.
  • Easy Integration: ONFI compliance simplifies integration with existing systems and controllers.
  • Low Power Consumption: Designed for low power consumption, making it suitable for mobile and embedded applications.

Additional Details

The MT29F512G08CMCCBH7-6R:C operates at a supply voltage of typically 3.3V or 1.8V. It supports various data transfer modes, including synchronous and asynchronous operations. The device is available in a compact package, such as a ball grid array (BGA), for easy surface mounting on printed circuit boards. The operating temperature range is typically from -40°C to +85°C, making it suitable for industrial and automotive applications. The endurance rating is typically specified in terms of program/erase cycles, indicating the number of times the memory can be written to and erased before performance degrades. The specific package type and dimensions can be found in the product datasheet provided by Micron Technology.

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