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Same model may have multiple batches, images only for reference.
MT29F4G08ABADAH4-IT:D TR Micron Technology Inc.
Same model may have multiple batches, images only for reference.

MT29F4G08ABADAH4-IT:D TR

Part No MT29F4G08ABADAH4-IT:D TR
Manufacturer Micron Technology Inc.
Catalog Memory
Description IC FLASH 4GBIT PARALLEL 63VFBGA
Datasheet
MT29F4G08ABADAH4-IT:D TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1310555-MT29F4G08ABADAH4-IT:D TR
Category Integrated Circuits (ICs)>Memory >Memory
Mfr Micron Technology Inc.
Packaging Tape & Reel (TR) Cut Tape (CT)
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Ultra Librarian 3D Model Ultra Librarian MT29F4G08ABADAH4-IT:D TR CAD Model

Description

Micron NAND Flash devices include an asynchronous data interface for high-performance I/Ã operations. These devices use a highly multiplexed 8-bit bus (l/Ox) to transfercommands, address, and data, There are five control signals used to implement theasynchronous data interface: CE#, CLE, ALE, WE#, and RE#, Additional signals controlhardware write protection and monitor device status (R/B#).

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