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MT29F32G08CBADAL83A3WC1-M

Part No MT29F32G08CBADAL83A3WC1-M
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 32Gb NAND Flash 4Gx8 MLC Wafer
Sample
Rohs State Need to verify
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1452798-MT29F32G08CBADAL83A3WC1-M
Manufacturer Micron Technology Inc.
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 32Gbit
Memory Organization 4G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Ultra Librarian 3D Model Ultra Librarian MT29F32G08CBADAL83A3WC1-M CAD Model

Description

The MT29F32G08CBADAL83A3WC1-M by Micron is a cutting-edge 32Gb NAND Flash memory component built using multi-level cell (MLC) technology. This specific model is provided in a wafer form, catering to manufacturers and designers who are developing high-capacity, compact storage solutions. MLC technology allows for storing more data per cell than single-level cell (SLC) flash, effectively doubling the storage density. This makes the MT29F32G08CBADAL83A3WC1-M an ideal choice for a wide range of applications, including solid-state drives (SSDs), flash memory cards, and other electronic devices that demand high-density, reliable storage. The use of 4Gx8 architecture improves the efficiency of data storage and retrieval, contributing to the device's high performance. Micron's NAND Flash memory is renowned for its durability and ability to retain data integrity even under challenging conditions. This component is a testament to Micron's innovation in NAND technology, providing developers and manufacturers with a reliable and high-performing storage solution.

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