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MT25TL512HBA8E12-0SIT

Part No MT25TL512HBA8E12-0SIT
Manufacturer Micron Technology Inc.
Catalog Memory
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 16+
Reference case TPBGA24
Manufacturer Micron Technology Inc.
Manufacturer Homepage www.micron.com
Win Source Part Number 719617-MT25TL512HBA8E12-0SIT
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MT25TL512HBA8E12-0SIT CAD Model

Description

The MT25TL512HBA8E12-0SIT is a high-performance serial NOR flash memory device manufactured by Micron Technology Inc. This memory chip is designed to provide reliable and efficient storage for code and data in a variety of embedded systems. Its advanced features and compact design make it suitable for applications requiring high-density, low-power, and fast access times.

Applications:

  • Embedded systems
  • Automotive electronics
  • Industrial control systems
  • Networking equipment
  • Consumer electronics

Features:

  • High Density: 512Mb (64MB) storage capacity for storing large amounts of code and data.
  • Serial Peripheral Interface (SPI): Uses a standard SPI interface for easy integration with microcontrollers and processors.
  • Quad SPI (QSPI): Supports QSPI for increased data throughput and faster read/write operations.
  • Low Power Consumption: Optimized for low-power operation, extending battery life in portable devices.
  • Wide Operating Voltage Range: Operates over a broad voltage range, enhancing compatibility with various systems.
  • Extended Temperature Range: Suitable for use in harsh environments with a wide temperature range.

Benefits:

  • Increased Storage Capacity: The high density allows for storing complex software and large datasets.
  • Simplified Integration: The SPI interface simplifies integration with existing systems, reducing development time.
  • Improved Performance: QSPI support enables faster data transfer rates, enhancing system performance.
  • Extended Battery Life: Low power consumption contributes to longer battery life in portable applications.
  • Enhanced Reliability: Designed for reliable operation in demanding environments, ensuring data integrity.

Additional Details:

The MT25TL512HBA8E12-0SIT flash memory device is available in a compact package, suitable for space-constrained applications. It is designed for high endurance, supporting a large number of program/erase cycles. It is also RoHS compliant, ensuring adherence to environmental standards.

Technical Specifications (Typical Values):

  • Density: 512Mb (64MB)
  • Interface: SPI, QSPI
  • Operating Voltage: 2.7V to 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package: Consult Datasheet (likely SOIC, WSON or similar)

The “HBA8E12” portion specifies details about the voltage range, temperature range and packaging. The “0SIT” likely refers to the specific options and packaging details. Consult the Micron datasheet for the definitive specifications.

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