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VP2106N3-G

Part No VP2106N3-G
Manufacturer Microchip Technology
Catalog FETs - Single
Description P-Channel Enhancement-Mode Vertical DMOS FET | MOSFET P-CH 60V 0.25A TO92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 250mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 12Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 1mA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 60pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-92-3
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1279745-VP2106N3-G
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian VP2106N3-G CAD Model

Description

Microchip Technology's VP2106N3-G P-Channel Enhancement Mode MOSFET

The VP2106N3-G is a high-performance, P-channel enhancement mode field-effect transistor (FET) from Microchip Technology, designed for power management applications. This MOSFET is a robust and efficient solution for switching and amplification needs in various electronic devices.

Key Features:

  • Low On-Resistance: The device offers a low on-resistance of 1.25 Ohms, which enhances its efficiency by minimizing power loss during operation.
  • High Threshold Voltage: With a threshold voltage of -2.0V to -4.0V, the VP2106N3-G ensures reliable operation and reduces the risk of unintentional turn-on.
  • High Input Impedance: The high input impedance characteristic of this MOSFET makes it suitable for interfacing with high-impedance sources, such as sensors or microcontrollers.
  • Low Power Consumption: Its low power drive requirement makes it an excellent choice for battery-powered applications, contributing to longer battery life.
  • Surface Mount Package: The VP2106N3-G comes in a TO-92 package, which is well-suited for compact surface mount technology (SMT) designs.

Applications:

The VP2106N3-G is versatile and can be used in a wide range of applications, including but not limited to:

  • Power Management Circuits
  • Load/Relay Drivers
  • Motor Controllers
  • Battery Operated Systems
  • Switch Mode Power Supplies (SMPS)
  • Power Amplifiers

Quality and Reliability:

Microchip Technology is known for its commitment to quality, and the VP2106N3-G is no exception. It is designed to meet the rigorous standards of the industry, ensuring reliability and performance in even the most demanding conditions. Whether you are developing consumer electronics, automotive systems, or industrial controls, the VP2106N3-G is an excellent choice for efficient and reliable power switching.

Ordering Information:

The VP2106N3-G is available for order now. For detailed specifications and purchasing options, please visit Microchip Technology's official website or contact an authorized distributor.

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