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JAN1N6473US

Part No JAN1N6473US
Manufacturer Microchip Technology
Catalog TVS - Diodes
Description TVS DIODE 24VWM 41.4VC G-MELF  /  41.4V Clamp 207A (8/20µs) Ipp Tvs Diode Surface Mount G-MELF (D-5C)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Circuit Protection>TVS - Diodes
Mfr Microchip Technology
Series Military, MIL-PRF-19500/552
Package Bulk
Type Zener
Unidirectional Channels 1
Voltage - Reverse Standoff (Typ) 24V
Voltage - Breakdown (Min) 27V
Voltage - Clamping (Max) @ Ipp 41.4V
Current - Peak Pulse (10/1000µs) 207A (8/20µs)
Power - Peak Pulse 1500W (1.5kW)
Power Line Protection No
Applications General Purpose
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case SQ-MELF, G
Supplier Device Package G-MELF (D-5C)
Base Product Number 1N6473
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1086-2291,1086-2291-MIL
Standard Package 1
Win Source Part Number 1001314-JAN1N6473US
Ultra Librarian 3D Model Ultra Librarian JAN1N6473US CAD Model

Description

Product Overview: JAN1N6473US from Microchip Technology

The JAN1N6473US is a high-reliability, military-grade diode designed and manufactured by Microchip Technology. This component is specifically engineered to meet the stringent requirements of aerospace, defense, and other critical applications where performance and durability are paramount.

Key Features

  • Robust Performance: The JAN1N6473US offers exceptional performance under extreme conditions, making it suitable for harsh environments encountered in military and aerospace applications.
  • High Reliability: As a product compliant with military specifications, it ensures long-term reliability and stability, which is crucial for mission-critical systems.
  • Low Leakage Current: It features low leakage current characteristics, which is essential for maintaining energy efficiency and preventing unwanted power dissipation.
  • High Surge Capability: This diode can withstand high surge currents, providing protection against sudden spikes in voltage and current that can occur in electronic circuits.
  • Hermetically Sealed: The JAN1N6473US is hermetically sealed to protect against moisture and contaminants, ensuring consistent performance throughout its lifespan.

Applications

The JAN1N6473US is ideal for a variety of applications where reliability is non-negotiable, including:

  • Power supply circuits in military equipment
  • Voltage regulation modules in aerospace systems
  • Protection circuits in satellite communication devices
  • High-reliability commercial electronics

Quality Assurance

Microchip Technology's commitment to quality is evident in the JAN1N6473US diode. Each component is subjected to rigorous testing and verification processes to ensure it meets the Joint Army/Navy (JAN) classification, which is recognized for its high standard in electronic components used in military applications.

Conclusion

In summary, the JAN1N6473US from Microchip Technology is a testament to the company's dedication to providing top-tier, reliable electronic components for the most demanding industries. With its robust construction, high reliability, and excellent performance characteristics, the JAN1N6473US is an outstanding choice for designers and engineers looking for military-specification diodes.

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