The AT34C02BN-10SU-1.7 is a cutting-edge EEPROM (Electrically Erasable Programmable Read-Only Memory) device designed and manufactured by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. This particular model is part of the renowned AT34C series, known for its reliability and performance in a wide array of applications.
Key Features
- Memory Size: The device offers 2 Kbit (256 x 8) of memory, providing ample space for device configurations, unique identifiers, and small application data storage.
- Interface Type: It employs a user-friendly I²C (2-wire) serial interface, facilitating easy integration with a host of microcontrollers and processors.
- Write Cycle Time: The AT34C02BN-10SU-1.7 boasts a fast write cycle time of 5 ms (max), enabling quick data updates and minimal system downtime.
- Operating Voltage: This device operates at a voltage range of 1.7V to 5.5V, making it versatile for various low-voltage applications while also supporting traditional 5V systems.
- Temperature Range: It is designed to operate within an industrial temperature range of -40°C to +85°C, ensuring reliable performance under extreme conditions.
- Packaging: The EEPROM comes in an 8-pin SOIC (Small Outline Integrated Circuit) package, which is suitable for surface-mount technology and occupies minimal board space.
Applications
The AT34C02BN-10SU-1.7 is ideal for a variety of applications, including:
- Wireless devices and RF identification
- Medical and healthcare systems
- Industrial and automotive control systems
- Smart cards and personal electronics
- Consumer electronics
Quality and Support
Microchip Technology is committed to delivering high-quality products. The AT34C02BN-10SU-1.7 is backed by Microchip's strong support and service, ensuring that customers receive the assistance they need from design to deployment. With its robust design and Microchip's renowned reliability, this EEPROM is an excellent choice for designers looking for a dependable and efficient non-volatile memory solution.