The AT25M02-SSHD-B is a robust and reliable serial EEPROM memory component designed and manufactured by Microchip Technology. This high-performance storage solution offers a substantial 2-Mbit capacity, making it an excellent choice for applications that require non-volatile memory storage without the need for constant refreshing.
Key Features
- Memory Size: 2 Mbit (256K x 8)
- Operating Voltage: 1.7V to 5.5V, accommodating a wide range of applications and power environments.
- Interface Type: SPI (Serial Peripheral Interface), which ensures high-speed data transfer and simple integration into various system architectures.
- Write Cycle Time: 5 ms (max), allowing quick data writes and efficient performance in write-intensive operations.
- Operating Temperature Range: -40°C to +85°C, making it suitable for use in harsh environmental conditions.
- Endurance: 1,000,000 write cycles, ensuring long-term reliability and stability for applications that require frequent data updates.
- Data Retention: 100 years, offering a durable data storage solution over an extended period.
Applications
The AT25M02-SSHD-B is versatile and can be used across various industries and applications. Its robustness and large storage capacity make it ideal for:
- Industrial control systems
- Consumer electronics
- Internet of Things (IoT) devices
- Automotive electronics
- Medical devices
- Smart metering
Product Benefits
This EEPROM from Microchip Technology is designed for efficiency and convenience. It supports SPI modes 0 and 3, offers a low-power standby mode, and includes a software write protection mechanism to prevent accidental data corruption. The AT25M02-SSHD-B is available in an 8-lead SOIC package, which is widely accepted in the industry and ensures easy mounting on printed circuit boards.
Conclusion
Whether for industrial, automotive, or consumer applications, the Microchip Technology AT25M02-SSHD-B serial EEPROM stands out for its high capacity, durability, and ease of integration, making it an ideal choice for designers looking for a reliable non-volatile memory solution.