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APTGF150DH120G

Part No APTGF150DH120G
Manufacturer Microchip Technology
Catalog IGBTs - Modules
Description IGBT MODULE 1200V 200A 961W SP6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Microchip Technology
Package Bulk
Product Status Obsolete
IGBT Type NPT
Configuration Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 200 A
Power - Max 961 W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 150A
Current - Collector Cutoff (Max) 350 µA
Input Capacitance (Cies) @ Vce 10.2 nF @ 25 V
Input Standard
NTC Thermistor No
Mounting Type Chassis Mount
Package / Case SP6
Supplier Device Package SP6
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 564238-APTGF150DH120G
Ultra Librarian 3D Model Ultra Librarian APTGF150DH120G CAD Model

Description

Microchip Technology's APTGF150DH120G IGBT

The APTGF150DH120G is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) module offered by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. Designed for high efficiency and reliability, this IGBT module is an excellent choice for a wide range of power applications, including motor drives, uninterruptible power supplies (UPS), and inverters for renewable energy sources such as solar and wind power.

This state-of-the-art device features a trench gate field-stop IGBT technology that provides superior performance by combining low on-state voltage drop with high switching speeds. The APTGF150DH120G operates at a collector current of up to 150A and has a collector-emitter voltage of 1200V, making it suitable for high power applications that require robust and efficient power conversion.

The module is housed in a compact and thermally efficient package, ensuring that it can handle significant power without overheating. It also includes an anti-parallel diode for freewheeling applications, which helps to protect the IGBT against reverse voltage transients and improves the overall system reliability.

Key features of the APTGF150DH120G include:

  • High current rating of 150A
  • High voltage rating of 1200V
  • Low on-state voltage to minimize conduction losses
  • Fast switching capability to reduce switching losses
  • Integrated freewheeling diode for circuit protection
  • Optimized for high-frequency operation
  • Excellent thermal performance with a robust module package

Engineers and designers looking for a reliable and high-performance IGBT module for their power systems will find the APTGF150DH120G to be an ideal solution. Microchip Technology's commitment to quality ensures that this IGBT module will provide long-term performance and help to increase the efficiency and reliability of any power management system it is integrated into.

For detailed specifications, application notes, and additional resources, visit the Microchip Technology website or contact their support team for personalized assistance.

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