Product Overview: 28C64AT-25I/SO from Microchip Technology

The 28C64AT-25I/SO is a high-performance, 64-Kilobit CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory) produced by Microchip Technology, a leading provider of microcontroller and analog semiconductors. This particular EEPROM model features a 64K (8K x 8) memory size and is designed for industrial applications, with an operational temperature range of -40°C to +85°C, ensuring reliable performance under harsh conditions.

Encased in a 28-lead SOIC (Small Outline Integrated Circuit) package, the 28C64AT-25I/SO is ideal for space-constrained applications requiring a compact memory solution. The EEPROM is characterized by its fast write cycle times of just 5 ms, allowing for quick data updates and storage. This speed is complemented by a 25 ns access time, enabling high-speed data retrieval, which is critical for performance-demanding applications.

One of the key features of the 28C64AT-25I/SO is its low-power consumption, making it suitable for battery-operated and power-sensitive devices. The EEPROM also supports a wide voltage range, typically from 4.5V to 5.5V, providing flexibility in various system designs. It is also JEDEC standard compliant, ensuring compatibility with many types of microcontrollers and digital systems.

The device offers a range of smart features, such as JEDEC standard byte-wide pinout, self-timed write cycle with auto-clear, and hardware and software data protection schemes to prevent inadvertent writes. Furthermore, the EEPROM supports a minimum of 100,000 write cycles and has a data retention period of at least 200 years, ensuring the longevity and durability of stored data.

Microchip Technology's 28C64AT-25I/SO is a versatile and reliable EEPROM, suitable for a wide array of applications, including but not limited to automotive systems, industrial control units, medical devices, and smart consumer electronics. Its robust design and advanced technical specifications make it an excellent choice for designers looking for a non-volatile memory solution that combines high-speed operation with long-term data integrity.