BC848-B-RTK/P NPN Bipolar Junction Transistor

The BC848-B-RTK/P is an adaptable and robust NPN Bipolar Junction Transistor designed for optimal performance in various low and medium-power electronic applications. It provides reliable operation and contributes to efficient circuit designs.

• Current Gain (hFE): 200-450
• Collector Current (Ic): 100mA
• Collector-Emitter Voltage (Vceo): 30V
• Enhanced Durability

Applications:

• Digital Switching
• Power Supply Circuits
• Signal Amplifiers
• Remote Sensing Applications

Benefits: Offers high performance with minimal power loss, making it ideal for power-sensitive applications. Its durable construction ensures long-term stability and resistance to environmental stressors.