The 2SC3875S is an NPN Epitaxial Planar Silicon Transistor manufactured by KEC. It is designed for high-frequency amplification and switching applications.
Applications
- RF Amplifiers
- Oscillators
- Mixers
- High-speed switching circuits
- VHF and UHF applications
Features
- High Transition Frequency (fT): Typically 9 GHz
- Low Noise Figure: Typically 1.5 dB at 1 GHz
- High Power Gain
- Small signal amplifier
- Surface Mount Package
Benefits
- Excellent high-frequency performance enables use in demanding RF applications.
- Low noise characteristics ensure high signal integrity.
- Small surface mount package facilitates compact circuit designs.
- High power gain for efficient signal amplification.
Technical Specifications
The 2SC3875S features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 50mA, and a power dissipation (PC) of 200mW. It has a transition frequency (fT) of typically 9 GHz and a noise figure of typically 1.5 dB at 1 GHz. The operating temperature range is -55°C to +150°C. It is available in a small surface mount package (SOT-343).
