The 2SC3875S is an NPN Epitaxial Planar Silicon Transistor manufactured by KEC. It is designed for high-frequency amplification and switching applications.

Applications

• RF Amplifiers
• Oscillators
• Mixers
• High-speed switching circuits
• VHF and UHF applications

Features

• High Transition Frequency (fT): Typically 9 GHz
• Low Noise Figure: Typically 1.5 dB at 1 GHz
• High Power Gain
• Small signal amplifier
• Surface Mount Package

Benefits

• Excellent high-frequency performance enables use in demanding RF applications.
• Low noise characteristics ensure high signal integrity.
• Small surface mount package facilitates compact circuit designs.
• High power gain for efficient signal amplification.

Technical Specifications

The 2SC3875S features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 50mA, and a power dissipation (PC) of 200mW. It has a transition frequency (fT) of typically 9 GHz and a noise figure of typically 1.5 dB at 1 GHz. The operating temperature range is -55°C to +150°C. It is available in a small surface mount package (SOT-343).