The 2N5551C is a high-voltage NPN transistor manufactured by KEC (Korea Electronics Co., Ltd.). It's designed for use in a variety of general-purpose amplification and switching applications, particularly where high voltage handling is required.
Applications
- High-voltage amplification
- Switching circuits
- Linear regulators
- Oscillators
- General-purpose amplifiers
Features
- NPN Transistor
- High Voltage: VCEO = 160V
- Continuous Collector Current: IC = 600mA
- High Transition Frequency: fT = 100 MHz (typical)
- Low Noise Figure
Benefits
- Suitable for high-voltage applications, preventing breakdown and ensuring reliable operation.
- Versatile usage in amplification and switching circuits due to its robust characteristics.
- Improved signal amplification with a high transition frequency.
- Lower noise amplification in sensitive circuits thanks to its low noise figure.
- Stable performance and long lifespan due to KEC's manufacturing quality.
Additional Details
The 2N5551C comes in a TO-92 package. Its total power dissipation is around 625mW. The collector-base voltage (VCBO) is 180V, and the emitter-base voltage (VEBO) is 6V. The operating and storage junction temperature ranges from -55°C to +150°C. The DC current gain (hFE) typically ranges from 80 to 250, depending on the operating conditions. Its saturation voltage is relatively low, contributing to its efficiency in switching applications.
