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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 25mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 74nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2250pF at 25V
Power Dissipation (Maximum) 360W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191288-IXTP75N10P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP75N10P CAD Model

Description

The IXYS MOSFET is a high-performance electronic component designed for use in a variety of applications.

  • This N-Channel transistor is ideal for use in: discrete semiconductor products, and features a drive voltage of up to 10V.
  • The device has a drain-source breakdown voltage of: 100V
  • can handle a continuous drain current of up to: 75A.
  • With an input capacitance of: 2250pF @ 25V
  • the IXYS MOSFET is a: reliable and efficient component that can be used in a wide range of electronic devices.
  • The package includes: 50 units
  • it is available in: TO-220-3 packaging.
  • The device has a power dissipation of up to: 360W
  • can operate @ temperatures ranging from: -55°C to 175°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $5.2552 $68.3176
31+ $4.3120 $133.6720
47+ $4.1772 $196.3284
64+ $4.0425 $258.7200
83+ $3.9077 $324.3391
111+ $3.5035 $388.8885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 15,000 pieces
MOQ: 13 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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