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Same model may have multiple batches, images only for reference.
IXGH40N60B Real Image
Same model may have multiple batches, images only for reference.

IXGH40N60B

Part No IXGH40N60B
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 250W TO247AD / IGBT 600 V 75 A 250 W Through Hole TO-247AD
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Power - Max 250 W
Switching Energy 2.7mJ (off)
Input Type Standard
Gate Charge 116 nC
Td (on/off) @ 25°C 25ns/180ns
Test Condition 480V, 40A, 4.7Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH40
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1325548-IXGH40N60B
Ultra Librarian 3D Model Ultra Librarian IXGH40N60B CAD Model

Description

The IXYS IXGH40N60B is a single IGBT transistor with a collector-emitter breakdown voltage (Vce) of 600 V and a maximum collector current (Ic) of 75 A.

  • Collector-Emitter Breakdown Voltage (Vce): 600 V
  • Maximum Collector Current (Ic): 75 A
  • Maximum On-State Voltage (Vce(on)): 2.1V @ 15V Vge, 40A Ic
  • Switch Off Time: 25ns @ 480V, 40A, 4.7Ohm, 15V
  • Switch On Time: 180ns @ 480V, 40A, 4.7Ohm, 15V
  • Gate Charge: 116 nC
  • Temperature Range: -55°C to 150°C (TJ)

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