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Same model may have multiple batches, images only for reference.
IXGH24N60C4 Real Image
Same model may have multiple batches, images only for reference.

IXGH24N60C4

Part No IXGH24N60C4
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 56A 190W TO247
Datasheet
IXGH24N60C4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 56A
Pulsed Collector Current 130A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 24A
Maximum Power Dissipation 190W
Total Switching Energy(Ets) 400μJ (on), 300μJ (off)
Input Type Standard
Gate Charge 64nC
Turn-on and Turn-off delay time 21ns/143ns
Testing Conditions 360V, 24A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049583-IXGH24N60C4
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IXGH24N60C4 CAD Model

Description

The IXYS IXGH24N60C4 is an insulated-gate bipolar transistor (IGBT) that is designed with a through-hole mounting.

  • Maximum Current Collector: 56A
  • Collector-Emitter Breakdown Voltage: 600V
  • Popularity: medium
  • Supply and Demand: sufficient
  • Suitable for: power management, alternative energy, and industrial applications
  • Operating Temperature: -55°C to 150°C (TJ)

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