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Same model may have multiple batches, images only for reference.
IXGH15N120BD1 Real Image
Same model may have multiple batches, images only for reference.

IXGH15N120BD1

Part No IXGH15N120BD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 30A 150W TO247AD
Datasheet
IXGH15N120BD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 30A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 3.2V @ 15V, 15A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 1.75mJ (off)
Input Type Standard
Gate Charge 69nC
Turn-on and Turn-off delay time 25ns/150ns
Testing Conditions 960V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049562-IXGH15N120BD1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Motor Drive & Control, Alternative Energy, Power Management
Ultra Librarian 3D Model Ultra Librarian IXGH15N120BD1 CAD Model

Description

The IXGH15N120BD1 is an IGBT type transistor manufactured by IXYS.

  • Collector-Emitter Breakdown Voltage (VCEO): 1200V
  • Maximum Collector Current: 30A
  • Maximum Power Dissipation: 150W
  • Pulsed Collector Current: 60A
  • Collector-Emitter Saturation Voltage (Max): 3.2V @ 15V, 15A
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 150ns
  • Reverse Recovery Time (trr): 40ns
  • Gate Charge: 69nC
  • Package: TO-247AD (IXGH)
  • Temperature Range: -55°C to 150°C
  • Applications: Industrial, Motor Drive & Control, Alternative Energy, Power Management

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