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Same model may have multiple batches, images only for reference.
IXGH12N60C Real Image
Same model may have multiple batches, images only for reference.

IXGH12N60C

Part No IXGH12N60C
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 24A 100W TO247AD
Datasheet
IXGH12N60C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 24A
Pulsed Collector Current 48A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 12A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 90μJ (off)
Input Type Standard
Gate Charge 32nC
Turn-on and Turn-off delay time 20ns/60ns
Testing Conditions 480V, 12A, 18 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049558-IXGH12N60C
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IXGH12N60C CAD Model

Description

The IXYS IXGH12N60C is a through-hole IGBT transistor designed for use in power management, alternative energy, and industrial applications.

  • Maximum Collector Current: 24A
  • Collector-Emitter Breakdown Voltage: 600V
  • Gate Charge: 32nC
  • Collector-Emitter Saturation Voltage: 2.7V @ 15V and 12A
  • Total Switching Energy: 90μJ (off)
  • Turn-On and Turn-Off Delay Times: 20ns and 60ns, respectively
  • Package: TO-247AD
  • Maximum Power Dissipation: 100W
  • Supply and Demand: sufficient

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