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IXFX230N20T

Part No IXFX230N20T
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 200V 230A PLUS247 / GigaMOS Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) at 25°C 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 60A, 10V
Vgs(th) (Maximum) at Id 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 378nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 28000pF at 25V
Power Dissipation (Maximum) 1670W (Tc)
Mounting Style Through Hole
Supplier Device Package PLUS247 -3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810612-IXFX230N20T
Ultra Librarian 3D Model Ultra Librarian IXFX230N20T CAD Model

Description

The IXYS IXFX230N20T is an N-channel MOSFET.

  • Current Rating: 230A
  • Voltage Rating: 200V
  • Maximum Rds On: 7.5mOhm @ 60A, 10V
  • Package: TO-247-3
  • Mounting Style: Through Hole
  • Gate Charge: 378nC @ 10V
  • Input Capacitance: 28000pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $41.9361 $83.8722
3+ $34.4091 $103.2273
5+ $33.3338 $166.6690
7+ $32.2586 $225.8102
9+ $31.1833 $280.6497
11+ $27.9574 $307.5314
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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